symbol v ds v gs i dm i ar e ar t j ,t stg symbol typ max 20 30 46 60 r q jl 5.3 7 25 w t c =100c 12.5 a repetitiveavalancheenergyl=0.1mh c 10 mj w junctionandstoragetemperaturerange a p dsm c 2.1 1.33 55to175 t a =70c i d continuousdraincurrent g maximum units parameter t c =25c t c =100c 30 maximumjunctiontoambient a steadystate 86 20 avalanchecurrent c 8 powerdissipation b t c =25c p d c/w absolute maximum ratings t a =25c unless otherwise noted vv 20 pulseddraincurrent b powerdissipation a t a =25c gatesourcevoltage drainsourcevoltagemaximumjunctiontocase c steadystate c/w thermal characteristicsparameter units maximumjunctiontoambient a t10s r q ja c/w AOD410n-channel enhancement mode field effect transistor features v ds (v)=30v i d =8a(v gs =10v) r ds(on) <65m w (v gs =10v) r ds(on) <105m w (v gs =4.5v) 100% uis tested! 100% rg tested! general description theAOD410usesadvancedtrenchtechnologytoprovideexcellentr ds(on) andlowgatecharge.this deviceissuitableforuseasaloadswitchorinpwmapplications. rohscompliant halogenfree* g ds g to-252 d-pak top view s bottom view d g s alpha & omega semiconductor, ltd. www.aosmd.com
AOD410 symbol min typ max units bv dss 30 v 1 t j =55c 5 i gss 100 na v gs(th) 1 1.8 3 v i d(on) 10 a 48 65 t j =125c 76 100 75 105 m w g fs 6.2 s v sd 0.75 1 v i s 4.3 a c iss 288 pf c oss 57 pf c rss 39 pf r g 3 w q g (10v) 6.72 nc q g (4.5v) 3.34 nc q gs 0.76 nc q gd 1.78 nc t d(on) 3.7 ns t r 3.7 ns t d(off) 15.6 ns t f 2.6 ns t rr 12.6 ns q rr 5.1 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. maximum body-diode continuous currentinput capacitance output capacitance turn-on delaytime dynamic parameters v gs =10v, v ds =15v, i d =8a total gate chargegate drain charge v gs =0v, v ds =15v, f=1mhz switching parameters turn-on rise timeturn-off delaytime v gs =10v, v ds =15v, r l =1.8 w , r gen =3 w turn-off fall time total gate chargegate source charge gate resistance v gs =0v, v ds =0v, f=1mhz m w v gs =4.5v, i d =2a i s =1a,v gs =0v v ds =5v, i d =8a r ds(on) static drain-source on-resistanceforward transconductance diode forward voltage i dss m a gate threshold voltage v ds =v gs i d =250 m a v ds =24v, v gs =0v v ds =0v, v gs = 20v zero gate voltage drain currentgate-body leakage current electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions body diode reverse recovery timebody diode reverse recovery charge i f =8a, di/dt=100a/ m s drain-source breakdown voltageon state drain current i d =250 m a, v gs =0v v gs =4.5v, v ds =5v v gs =10v, i d =8a reverse transfer capacitance i f =8a, di/dt=100a/ m s a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the power dissipation p dsm is based on r q ja and the maximum allowed junction temperature of 150c. the value in any a given application depends on the user's specific board design, and the maximum temperature for 175c may be used if the pcb allows it.b. the power dissipation p d is based on t j(max) =175c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used.c: repetitive rating, pulse width limited by junction temperature t j(max) =175c. d. the r q ja is the sum of the thermal impedence from junction to case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating.g. the maximum current rating is limited by bond-wires. *this device is guaranteed green after data code 8x11 (sep 1 st 2008). rev4: oct 2008 alpha & omega semiconductor, ltd. www.aosmd.com
AOD410 typical electrical and thermal characteristics this product has been designed and qualified for the consumer market. applications or uses as critical 20 components in life support devices or systems are not authorized. aos does not assume any liability arising 46 out of such applications or uses of its products. aos reserves the right to improve product design, 5.3 7 functions and reliability without notice. 0 5 10 15 20 0 1 2 3 4 5 v ds (volts) fig 1: on-region characteristics i d (a) v gs =3v 3.5v 8v 6v 10v 5v 0 2 4 6 8 10 1.5 2 2.5 3 3.5 4 4.5 v gs (volts) figure 2: transfer characteristics i d (a) 40 50 60 70 80 90 100 0 2 4 6 8 10 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m w ww w ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 2 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v v gs =4.5v 25 50 75 100 125 150 175 2 4 6 8 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m w ww w ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =8a 25c 125c i d =8a 4v 4.5v alpha & omega semiconductor, ltd. www.aosmd.com
AOD410 typical electrical and thermal characteristics this product has been designed and qualified for the consumer market. applications or uses as critical 20 components in life support devices or systems are not authorized. aos does not assume any liability arising 46 out of such applications or uses of its products. aos reserves the right to improve product design, 5.3 7 functions and reliability without notice. 0 2 4 6 8 10 0 1 2 3 4 5 6 7 8 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 100 200 300 400 500 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note f) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance (note f) z q qq q ja normalized transient thermal resistance c oss c rss 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note f) 100 m s 10ms 1ms 0.1s 1s 10s dc r ds(on) limited t j(max) =150c t a =25c v ds =15v i d =8a single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =60c/w t on t p d in descending orderd=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 m s alpha & omega semiconductor, ltd. www.aosmd.com
AOD410 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform ig vgs - + vdc dut l vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f di/dt i rm rr vdd vdd q = - idt t rr - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms vds ar dss 2 e = 1/2 li ar ar alpha & omega semiconductor, ltd. www.aosmd.com
|
